Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

MOCVD growth of GaN-based high electron mobility transistor structures

Investigation of Hot Electrons and Hot Phonons Generated within an AlN/GaN High Electron Mobility Transistor

We review our recent results obtained on an AlN/GaN-based high-electron-mobility transistor. The temperature of the electrons drifting under a relatively-high electric field is significantly higher than the lattice temperature (i.e., the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-opti...

Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) Technology for High Gain and Highly Efficient Power Amplifiers

The ubiquitous network society is evolving at an accelerated pace using various mobile communication tools, especially mobile phones. The driving force behind such a rapid development of the network is the rise in requirements of various bandwidth sensitive user applications. This leads to a demand for large capacity mobile communications, with availability anytime, anywhere and with anything. ...

MOCVD Synthesis of Group III-Nitride Heterostructure Nanowires for Solid- State Lighting

Solid-state lighting (SSL) technologies, based on semiconductor light emitting devices, have the potential to reduce worldwide electricity consumption by more than 10%, which could significantly reduce U.S. dependence on imported energy and improve energy security. The III-nitride (AlGaInN) materials system forms the foundation for white SSL and could cover a wide spectral range from the deep U...

Electron transport in nitrogen-polar high electron mobility transistors